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High Switching Frequency Schottky Diodes , Low Power Loss Free Wheeling Diodes

    Buy cheap High Switching Frequency Schottky Diodes , Low Power Loss Free Wheeling Diodes from wholesalers
     
    Buy cheap High Switching Frequency Schottky Diodes , Low Power Loss Free Wheeling Diodes from wholesalers
    • Buy cheap High Switching Frequency Schottky Diodes , Low Power Loss Free Wheeling Diodes from wholesalers

    High Switching Frequency Schottky Diodes , Low Power Loss Free Wheeling Diodes

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    Brand Name : Uchi
    Model Number : MBR20200F
    Certification : CE / RoHS / ISO9001 / UL
    Price : Negotiation
    Payment Terms : T/T
    Supply Ability : 2000000 per month
    Delivery Time : Negotiation
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    High Switching Frequency Schottky Diodes , Low Power Loss Free Wheeling Diodes

    Low Power Loss Schottky Diodes High Switching Frequency For Free Wheeling Diodes​

    MBR20200F.pdf

    Schottky diode Schottky diode, also known as Schottky barrier diode (SBD for short), is a low-power, ultra-high-speed semiconductor device. The most notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and protection diodes. It is also useful as rectifier diodes and small-signal detector diodes in microwave communication circuits. It is more common in communication power supplies, frequency converters, etc.


    A typical application is in the switching circuit of the bipolar transistor BJT, by connecting the Shockley diode to the BJT to clamp, so that the transistor is actually close to the off state when it is in the on state, thereby increasing the switching speed of the transistor. This method is the technique used in the TTL internal circuits of typical digital ICs such as 74LS, 74ALS, 74AS, etc.


    The biggest feature of Schottky diodes is that the forward voltage drop VF is relatively small. In the case of the same current, its forward voltage drop is much smaller. Plus it has a short recovery time. It also has some disadvantages: the withstand voltage is relatively low, and the leakage current is slightly larger. It should be considered comprehensively when choosing.


    Features

    1. Common cathode structure
    2. Low power loss, high efficiency
    3. High Operating Junction Temperature
    4. Guard ring for overvoltage protection,High reliability
    5. RoHS product

    Applications

    1. High frequency switch Power supply

    2. Free wheeling diodes, Polarity protection applications

    MAIN CHARACTERISTICS

    IF(AV)

    10(2×5)A

    VF(max)

    0.7V (@Tj=125°C)

    Tj

    175 °C

    VRRM

    100 V

    PRODUCT MESSAGE

    Model

    Marking

    Package

    MBR10100

    MBR10100

    TO-220C

    MBRF10100

    MBRF10100

    TO-220F

    MBR10100S

    MBR10100S

    TO-263

    MBR10100R

    MBR10100R

    TO-252

    MBR10100V

    MBR10100V

    TO-251

    MBR10100C

    MBR10100C

    TO-220




    ABSOLUTE RATINGS (Tc=25°C)

    Parameter


    Symbol


    Value


    Unit

    Repetitive peak reverse voltage

    VRRM

    100

    V

    Maximum DC blocking voltage

    VDC

    100

    V

    Average forward current

    TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)


    per device


    per diode

    IF(AV)

    10 5

    A


    Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

    IFSM

    120

    A

    Maximum junction temperature

    Tj

    175

    °C

    Storage temperature range

    TSTG

    -40~+150

    °C


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