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Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

    Buy cheap Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply from wholesalers
     
    Buy cheap Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply from wholesalers
    • Buy cheap Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply from wholesalers
    • Buy cheap Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply from wholesalers

    Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

    Ask Lasest Price
    Brand Name : Uchi
    Model Number : Schottky diodes
    Certification : CE / RoHS / ISO9001 / UL
    Price : Negotiation
    Payment Terms : T/T
    Supply Ability : 2000000 per month
    Delivery Time : Negotiation
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    Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

    Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply​

    MBR10100.pdf


    The Schottky diode is named after its inventor, Dr. Schottky (Schottky), and SBD is the abbreviation of Schottky Barrier Diode (Schottky Barrier Diode, abbreviated as SBD). SBD is not made by the principle of contacting P-type semiconductor and N-type semiconductor to form PN junction, but by using the principle of metal-semiconductor junction formed by contacting metal and semiconductor. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, which is a kind of hot carrier diode.


    Features

    1. Common cathode structure
    2. Low power loss, high efficiency
    3. High Operating Junction Temperature
    4. Guard ring for overvoltage protection,High reliability
    5. RoHS product

    Applications

    1. High frequency switch Power supply

    2. Free wheeling diodes, Polarity protection applications

    MAIN CHARACTERISTICS

    IF(AV)

    10(2×5)A

    VF(max)

    0.7V (@Tj=125°C)

    Tj

    175 °C

    VRRM

    100 V

    PRODUCT MESSAGE

    Model

    Marking

    Package

    MBR10100

    MBR10100

    TO-220C

    MBRF10100

    MBRF10100

    TO-220F

    MBR10100S

    MBR10100S

    TO-263

    MBR10100R

    MBR10100R

    TO-252

    MBR10100V

    MBR10100V

    TO-251

    MBR10100C

    MBR10100C

    TO-220

    ABSOLUTE RATINGS (Tc=25°C)

    Parameter


    Symbol


    Value


    Unit

    Repetitive peak reverse voltage

    VRRM

    100

    V

    Maximum DC blocking voltage

    VDC

    100

    V

    Average forward current

    TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)


    per device


    per diode

    IF(AV)

    10 5

    A


    Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

    IFSM

    120

    A

    Maximum junction temperature

    Tj

    175

    °C

    Storage temperature range

    TSTG

    -40~+150

    °C


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