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High Current Resistance Schottky Diode For High Frequency Switch Power Supply

    Buy cheap High Current Resistance Schottky Diode For High Frequency Switch Power Supply from wholesalers
     
    Buy cheap High Current Resistance Schottky Diode For High Frequency Switch Power Supply from wholesalers
    • Buy cheap High Current Resistance Schottky Diode For High Frequency Switch Power Supply from wholesalers

    High Current Resistance Schottky Diode For High Frequency Switch Power Supply

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    Brand Name : Uchi
    Model Number : MBR20100
    Certification : CE / RoHS / ISO9001 / UL
    Price : Negotiation
    Payment Terms : T/T
    Supply Ability : 2000000 per month
    Delivery Time : Negotiation
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    High Current Resistance Schottky Diode For High Frequency Switch Power Supply

    High Current Resistance Schottky Diode For High Frequency Switch Power Supply​

    MBR20100.pdf


    The internal circuit structure of a typical Schottky rectifier is based on an N-type semiconductor substrate, on which an N-epitaxial layer with arsenic as a dopant is formed. The anode uses materials such as molybdenum or aluminum to make the barrier layer. Silicon dioxide (SiO2) is used to eliminate the electric field in the edge area and improve the withstand voltage value of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 100% higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal, as shown in the figure. When a forward bias is applied to both ends of the Schottky barrier (the anode metal is connected to the positive pole of the power supply, and the N-type substrate is connected to the negative pole of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; otherwise, if When a reverse bias is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.


    Features

    1. Common cathode structure
    2. Low power loss, high efficiency
    3. High Operating Junction Temperature
    4. Guard ring for overvoltage protection,High reliability
    5. RoHS product

    Applications

    1. High frequency switch Power supply

    2. Free wheeling diodes, Polarity protection applications

    MAIN CHARACTERISTICS

    IF(AV)

    10(2×5)A

    VF(max)

    0.7V (@Tj=125°C)

    Tj

    175 °C

    VRRM

    100 V

    PRODUCT MESSAGE

    Model

    Marking

    Package

    MBR10100

    MBR10100

    TO-220C

    MBRF10100

    MBRF10100

    TO-220F

    MBR10100S

    MBR10100S

    TO-263

    MBR10100R

    MBR10100R

    TO-252

    MBR10100V

    MBR10100V

    TO-251

    MBR10100C

    MBR10100C

    TO-220

    ABSOLUTE RATINGS (Tc=25°C)

    Parameter


    Symbol


    Value


    Unit

    Repetitive peak reverse voltage

    VRRM

    100

    V

    Maximum DC blocking voltage

    VDC

    100

    V

    Average forward current

    TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)


    per device


    per diode

    IF(AV)

    10 5

    A


    Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

    IFSM

    120

    A

    Maximum junction temperature

    Tj

    175

    °C

    Storage temperature range

    TSTG

    -40~+150

    °C


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