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Common Cathode Structure Schottky Diode For Polarity Protection Applications

    Buy cheap Common Cathode Structure Schottky Diode For Polarity Protection Applications from wholesalers
     
    Buy cheap Common Cathode Structure Schottky Diode For Polarity Protection Applications from wholesalers
    • Buy cheap Common Cathode Structure Schottky Diode For Polarity Protection Applications from wholesalers

    Common Cathode Structure Schottky Diode For Polarity Protection Applications

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    Brand Name : Uchi
    Model Number : MBR10200
    Certification : CE / RoHS / ISO9001 / UL
    Price : Negotiation
    Payment Terms : T/T
    Supply Ability : 2000000 per month
    Delivery Time : Negotiation
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    Common Cathode Structure Schottky Diode For Polarity Protection Applications

    Common Cathode Structure Schottky Diode For Polarity Protection Applications​

    MBR10200.pdf


    A Schottky diode is a metal-semiconductor device made of a noble metal (gold, silver, aluminum, platinum, etc.) A as the positive electrode and an N-type semiconductor B as the negative electrode, and the potential barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in the N-type semiconductor and only a small amount of free electrons in the noble metal, the electrons diffuse from B with high concentration to A with low concentration. Obviously, there are no holes in metal A, and there is no diffusion of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the surface electrical neutrality is destroyed, thus forming a potential barrier, and its electric field direction is B→A. However, under the action of the electric field, the electrons in A will also produce a drift motion from A→B, thus weakening the electric field formed due to the diffusion motion. When a space charge region of a certain width is established, the electron drift movement caused by the electric field and the electron diffusion movement caused by different concentrations reach a relative balance, forming a Schottky barrier.


    Features

    1. Common cathode structure
    2. Low power loss, high efficiency
    3. High Operating Junction Temperature
    4. Guard ring for overvoltage protection,High reliability
    5. RoHS product

    Applications

    1. High frequency switch Power supply

    2. Free wheeling diodes, Polarity protection applications

    MAIN CHARACTERISTICS

    IF(AV)

    10(2×5)A

    VF(max)

    0.7V (@Tj=125°C)

    Tj

    175 °C

    VRRM

    100 V

    PRODUCT MESSAGE

    Model

    Marking

    Package

    MBR10100

    MBR10100

    TO-220C

    MBRF10100

    MBRF10100

    TO-220F

    MBR10100S

    MBR10100S

    TO-263

    MBR10100R

    MBR10100R

    TO-252

    MBR10100V

    MBR10100V

    TO-251

    MBR10100C

    MBR10100C

    TO-220

    ABSOLUTE RATINGS (Tc=25°C)

    Parameter


    Symbol


    Value


    Unit

    Repetitive peak reverse voltage

    VRRM

    100

    V

    Maximum DC blocking voltage

    VDC

    100

    V

    Average forward current

    TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)


    per device


    per diode

    IF(AV)

    10 5

    A


    Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

    IFSM

    120

    A

    Maximum junction temperature

    Tj

    175

    °C

    Storage temperature range

    TSTG

    -40~+150

    °C


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